Heterogeneous Integration for Silicon Photonic Integrated Circuits

Wednesday October 15, 2014 4:00 PM

Heterogeneous Integration for Silicon Photonic Integrated Circuits

Speaker: J. E. Bowers , University of California Santa Barbara, California, USA
Location: Spalding Laboratory 106 (Hartley Memorial Seminar Room)

We review progress on using Si as a photonic platform, focusing on lasers, amplifiers, modulators and photodetectors on silicon.  We review quantum well and quantum dot lasers and describe progress in silicon photonic integrated circuits.

The silicon photonics field is advancing rapidly, with many new devices demonstrated recently. Demonstrations have shown significantly improved performance that is now approaching that of devices on native InP substrates. In addition to the many passive devices, including AWGs, isolators, and circulators, active devices including lasers, modulators, amplifiers and photodetectors are reaching higher levels of integration. Over 160 devices have been integrated onto a single waveguide for applications such as integrated transmitters for datacom and telecom, true time delay PICs for phased array radars, and two dimensional swept transmitters for LIDAR.

Recent work has focused on the epitaxial growth of III-V layers on silicon using intermediate buffer layers, typically Ge and strained superlattices, to minimize dislocations propagating into the active region.  The use of quantum dot (QD) laser gain material can minimize the effect of threading dislocations on threshold and power, even after aging.

Series: Applied Physics Seminar Series
Contact: Christy Jenstad at 8124 cjenstad@caltech.edu
Department of Applied Physics and Materials Science